7 nanometer technology candidates: IMEC promising GAA NWFET technology
(IMEC) in the 2016 International Electronic Components Conference (IEEE International Electron Devices Meeting (IEDM) for the first time proposed by the vertical stacking of silicon nanowires around the gate (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) , The key technology of which is the dual-power metal gate, makes the critical voltages of the n-type and p-type devices equal, and for technology candidates below 7 nanometers, IMEC looks to surround gated nanowire transistors (GAA NWFETs) ) Will be selected.
